K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
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The device may include invalid blocks when first shipped. If program operation results in an error, map out the block including the page in error and copy the target data to another block. Invalid blocks are defined as blocks that contain one or more bad bits. We will also never share your payment details with your seller. Refer to Figure 15 below. At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify.
The memory array is made up of 32 cells that are serially connected to form a NAND structure. Additional invalid blocks may develop while being used. Freight and Payment Recommended logistics Recommended bank. Faithfully describe 24 hours delivery 7 days Changing or Refunding. After writing the first set of data up to byte X8 device or word X16 device into the selected cache registers, Cache Program command 15h instead of actual Page Program 10h is inputted to make cache registers free and to start internal program operation.
Refer to the attached technical notes for appropriate management of invalid blocks. Devices with invalid block s have the same quality level k9g2g08u0m devices with all valid blocks and have the same AC and DC characteristics.
The device provides cache program in a block.
K9F2G08U0M-PCB0 – SAMSUNG – Memory – Kynix Semiconductor
A program operation can be performed in typical ? Therefore, the system must be able to recognize the invalid block s based on the original invalid block information and create the invalid block table via the following suggested flow chart Figure 3.
Its NAND cell provides the most cost- effective solution for the solid state mass storage market. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks.
Unique ID datasehet Copyright Protection? Block address loading is accomplished in three cycles initiated by an Erase Setup command 60h. Once the command is latched, it does not need to be written for the following page read operation. Refer to table 3 for device status after reset operation. When the next set of data is inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming.
Random data output can be operated multiple times regardless of how many times it is done in a page. The on-chip write controller automates all program and datashewt functions including pulse repetition, where required, and internal verification and margining of data.
The repetitive high to low transitions of the RE clock make the device output the data starting from the selected column address up to the last column address. Once the program process starts, the Read Status Register command may be entered to read the status register.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory. This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions.
It returns to high when the internal controller has finished the operation. If the device is already in reset state a new reset command will be accepted by the command register.
(PDF) K9F2G08U0M Datasheet download
Any intentional erasure of the original invalid block information is prohibited. Margin,quality,low-cost products with low minimum orders. A NAND structure consists of 32 cells. A block consists of two NAND structured strings.
Total 1, NAND cells reside in a block. The device may output random data in a page instead of the consecutive sequential data by writing random data output command. An invalid block s does not affect the performance of valid block s because it is isolated from the bit line and the common source line by a select transistor. The number of valid blocks is presented with both cases of invalid blocks considered.
Device operations are selected by writing specific commands into the command register. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption. The Erase Confirm command D0h following the block address loading initiates the internal erasing process.
A recovery time of minimum 10? The bytes X8 device or words X16 device of data within the selected page are transferred to the data registers in less than 25?
256M X 8 Bit / 128M X 16 Bit NAND Flash Memory
A byte X8 device or word X16 device data register and a byte X8 device or word X16 device cache register are serially connected to each other. In Block Erase operation, however, only the three row address cycles are used.
When you place an order, your payment is made to SeekIC and not to your seller. The invalid block s status is defined by the 1st byte X8 device or 1st word X16 device in the spare area. The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.